| PART |
Description |
Maker |
| MC1471 MC1471C MC1741CDR2 MC1741CP1 MC1741CD MC174 |
Internally Compensated, High Performance Operational Amplifier
From old datasheet system
Internally Compensated / High Performance Operational Amplifier
Internally Compensated, High Performance Operational Amplifier
OP-AMP, 1 MHz BAND WIDTH, PDIP8
|
ONSEMI[ON Semiconductor]
|
| SE5532A SE5532 SA5532 NE5532 |
Internally-compensated dual low noise
|
Philips
|
| NE5532 NE5532AD8 NE5532AF NE5532AN NE5532D NE5532D |
Internally-compensated dual low noise operational amplifier
|
NXP Semiconductors N.V.
Philips Semiconductors / NXP Semiconductors
PHILIPS[Philips Semiconductors]
Philipss
|
| MC1436CD MC1436CP1 MC1436D MC1436P1 MC1436_D ON088 |
High Voltage / Internally Compensated Operational Amplifiers
From old datasheet system
High Voltage Internally Compensated Operational Amplifiers
High Voltage, Internally Compensated Operational Amplifiers
|
MOTOROLA[Motorola Inc]
ON Semi
Motorola, Inc
|
| SE5532 SE5532AD8G SE5532A SE5532AD8R2 SE5532AD8 SE |
Internally Compensated Dual Low Noise Operational Amplifier; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98 DUAL OP-AMP, 5000 uV OFFSET-MAX, 10 MHz BAND WIDTH, PDSO8
Internally Compensated Dual Low Noise Operational Amplifier; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Rail; Qty per Container: 98 DUAL OP-AMP, 3000 uV OFFSET-MAX, 10 MHz BAND WIDTH, PDSO8
|
ONSEMI[ON Semiconductor]
|
| SM5611 SM5611-060-A-3-L SM5611-060-A-3-N SM5611-06 |
OEM PRESSURE TRANSDUCER FULLY TEMPERATURE COMPENSATED AND CALIBRATED DUAL-IN-LINE PACKAGE
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
|
| 1N4575 1N4766A 1N4767 1N4768A 1N4576 1N4767A 1N457 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.070 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.014 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.028 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.099 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.002 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.005 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.003 V.
|
Motorola
|
| 1N828-1-1 1N822-2 1N829ATR 1N829ATR-1 1N829ATR-1-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA
0TC Reference Voltage Zener
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| BTA16-600BW3G BTA16-800BW3G BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA I-GT, 16 A I-T(RMS)
Triacs Silicon Bidirectional Thyristors
600V 16 A, 50mA Igt 3 Quadrant Internally Isolated Triac
|
ON Semiconductor
|
| MGP20N40CL |
CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
SMARTDISCRETES Internally Clamped / N-Channel IGBT
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
